bc556 / bc557 / bc558 / bc559 / bc560 ? pn p epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc556 / bc557 / bc558 / bc559 / bc560 rev. 1.1.0 1 april 2014 bc556 / bc557 / bc558 / bc559 / bc560 pnp epitaxial silicon transistor features ? switching and amplifier ? high-voltage: bc556, v ceo = -65 v ? low-noise: bc559, bc560 ? complement to bc546, bc547, bc548, bc549, and bc550 ordering information part number marking package packing method BC556ABU bc556a to-92 3l bulk bc556ata bc556a to-92 3l ammo bc556bta bc556b to-92 3l ammo bc556btf bc556b to-92 3l tape and reel bc556btfr bc556b to-92 3l tape and reel bc557ata bc557a to-92 3l ammo bc557bta bc557b to-92 3l ammo bc557btf bc557b to-92 3l tape and reel bc558bta bc558b to-92 3l ammo bc559bta bc559b to-92 3l ammo bc559cta bc559c to-92 3l ammo bc560cta bc560c to-92 3l ammo 1. collector 2. base 3. emitter to-92 1
bc556 / bc557 / bc558 / bc559 / bc560 ? pn p epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc556 / bc557 / bc558 / bc559 / bc560 rev. 1.1.0 2 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. electrical characteristics values are at t a = 25c unless otherwise noted. h fe classification symbol parameter value unit v cbo collector-base voltage bc556 -80 v bc557 / bc560 -50 bc558 / bc559 -30 v ceo collector-emitter voltage bc556 -65 v bc557 / bc560 -45 bc558 / bc559 -30 v ebo emitter-base voltage -5 v i c collector current (dc) -100 ma p c collector power dissipation 500 mw t j junction temperature 150 c t stg storage temperature range -65 to +150 c symbol parameter conditions min. typ. max. unit i cbo collector cut-off current v cb = -30 v, i e = 0 -15 na h fe dc current gain v ce = -5 v, i c = -2 ma 110 800 v ce (sat) collector-emitter saturation voltage i c = -10 ma, i b = -0.5 ma -90 -300 mv i c = -100 ma, i b = -5 ma -250 -650 v be (sat) collector-base saturation voltage i c = -10 ma, i b = -0.5 ma -700 mv i c = -100 ma, i b = -5 ma -900 v be (on) base-emitter on voltage v ce = -5 v, i c = -2 ma -600 -660 -750 mv v ce = -5 v, i c = -10 ma -800 f t current gain bandwidth product v ce = -5 v, i c = -10 ma, f = 10 mhz 150 mhz c ob output capacitance v cb = -10 v, i e = 0, f = 1 mhz 6 pf nf noise figure bc556 / bc557 / bc558 v ce = -5 v, i c = -200 a, f = 1 khz, r g = 2 k 210 db bc559 / bc560 1 4 bc559 v ce = -5 v, i c = -200 a, r g = 2 k , f = 30 to 15000 mhz 1.2 4.0 bc560 1.2 2.0 classification a b c h fe 110 ~ 220 200 ~ 450 420 ~ 800
bc556 / bc557 / bc558 / bc559 / bc560 ? pn p epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc556 / bc557 / bc558 / bc559 / bc560 rev. 1.1.0 3 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage and collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 i b = -50 a i b = -100 a i b = -150 a i b = -200 a i b = -250 a i b = -300 a i b = -350 a i b = -400 a i c [ma], collector current v ce [v], collector-emitter voltage -0.1 -1 -10 -100 1 10 100 1000 v ce = -5v h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 i c = -10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 v ce = -5v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 1 10 f=1mhz i e = 0 c ob (pf), capacitance v cb [v], collector-base voltage -1 -10 10 100 1000 v ce = -5v f t [mhz], current gain-bandwidth product i c [ma], collector current
bc556 / bc557 / bc558 / bc559 / bc560 ? pn p epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc556 / bc557 / bc558 / bc559 / bc560 rev. 1.1.0 4 physical dimensions figure 7. 3-lead, to92, jedec to-92 compliant straight lead configuration (old to92am3) package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/za/za03d.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/p acking_dwg/pkg-za03d_bk.pdf . d to-92 (bulk)
bc556 / bc557 / bc558 / bc559 / bc560 ? pn p epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bc556 / bc557 / bc558 / bc559 / bc560 rev. 1.1.0 5 physical dimensions (continued) figure 8. 3-lead, to92, molded 0.200 in line spacing lead form (j61z option) package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/za/za03f.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-za03f_bk.pdf . to-92 (ammo, tape and reel)
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